AP2623GY-HF
Description
AP2623 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all mercialindustrial applications.
G1
BVDSS RDS(ON) ID
D1
G2 S1
-30V 170mΩ
- 2A
D2
S2
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-30 +20 -2 -1.6 -20 1.2 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 110
Unit ℃/W
1...
