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SBT5551F - NPN Silicon Transistor

General Description

General purpose amplifier High voltage application

Key Features

  • high collector breakdown voltage : VCBO = 180V, VCEO = 160V.
  • Low collector saturation voltage : VCE(sat)=0.5V(MAX. ).
  • Complementary pair with SBT5401F Ordering Information Type NO. SBT5551F Marking FNF Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 0.9±0.1 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2097-000 1 SBT5551F Absolute maximum ratings Characteristic Collector-Base voltage C.

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Datasheet Details

Part number SBT5551F
Manufacturer AUK corp
File Size 191.39 KB
Description NPN Silicon Transistor
Datasheet download datasheet SBT5551F Datasheet

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Semiconductor SBT5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F Ordering Information Type NO. SBT5551F Marking FNF Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 0.9±0.1 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.