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SBT5551 - NPN Silicon Transistor

General Description

General purpose amplifier High voltage application

Key Features

  • high collector breakdown voltage : VCBO = 180V, VCEO = 160V.
  • Low collector saturation voltage : VCE(sat)=0.5V(MAX. ).
  • Complementary pair with SBT5401 Ordering Information Type NO. SBT5551 Marking FNF Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.9±0.1 KST-2012-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 +0.05 1 SBT5551 Absolute maximum ratings Ch.

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Datasheet Details

Part number SBT5551
Manufacturer AUK corp
File Size 191.98 KB
Description NPN Silicon Transistor
Datasheet download datasheet SBT5551 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor SBT5551 NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401 Ordering Information Type NO. SBT5551 Marking FNF Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.9±0.1 KST-2012-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 +0.