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SBT5401F - PNP Silicon Transistor

General Description

General purpose amplifier High voltage application

Key Features

  • high collector breakdown voltage : VCBO = -160V, VCEO = -150V.
  • Low collector saturation voltage : VCE(sat)=-0.5V(MAX. ).
  • Complementary pair with SBT5551F Ordering Information Type NO. SBT5401F Marking NFN Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2096-000 0.9±0.1 0~0.1 1 SBT5401F Absolute maximum ratings Characteristic Collector-Base volta.

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Datasheet Details

Part number SBT5401F
Manufacturer AUK corp
File Size 192.98 KB
Description PNP Silicon Transistor
Datasheet download datasheet SBT5401F Datasheet

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Semiconductor SBT5401F PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with SBT5551F Ordering Information Type NO. SBT5401F Marking NFN Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2096-000 0.9±0.1 0~0.