AP120N04BD - 40V N-Channel Enhancement Mode MOSFET

APM

General Description

operation with gate voltages as low as 4.5V.

or in other Switching application.

Key Features

VDS = 40V ID =120A RDS(ON) < 3.8mΩ @ VGS=10V (Type：2.8mΩ).

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AP120N04BD 40v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP120N04BD
Manufacturer	APM
File Size	711.15 KB
Description	40V N-Channel Enhancement Mode MOSFET
Datasheet	AP120N04BD Datasheet

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Description AP120N04BD 40V N-Channel Enhancement Mode MOSFET The AP120N04BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =120A RDS(ON) < 3.8mΩ @ VGS=10V (Type：2.