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SSC8162GT3 - N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin Configuration Top View Package Information S

Features

  • s.
  • VDS 60V VGS ±20V RDSon TYP 9mR@10V 13mR@4V5 ID 60A.
  • General.

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Datasheet Details

Part number SSC8162GT3
Manufacturer AFSEMI
File Size 551.54 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8162GT3 Datasheet
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Full PDF Text Transcription

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SSC8162GT3 N-Channel Enhancement Mode MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 9mR@10V 13mR@4V5 ID 60A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information SSC-V1.0 http://www.afsemi.
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