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SSC8132GN6 - N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Pin configuration Package Information Package:DFN5x6 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8132GN6

Features

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Datasheet Details

Part number SSC8132GN6
Manufacturer AFSEMI
File Size 511.03 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8132GN6 Datasheet

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Full PDF Text Transcription

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SSC8132GN6 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon TYP 1.7mR@10V 2.5mR@4V5 ID 100A  Load Switch  Portable Devices  DCDC conversion  General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Pin configuration  Package Information Package:DFN5x6 SSC-V1.0 http://www.afsemi.
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