Datasheet Details
- Part number
- PMZB670UPE
- Manufacturer
- nexperia ↗
- File Size
- 1.51 MB
- Datasheet
- PMZB670UPE-nexperia.pdf
- Description
- single P-channel Trench MOSFET
PMZB670UPE Description
PMZB670UPE 20 V, single P-channel Trench MOSFET Rev.3 * 23 March 2012 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.
PMZB670UPE Features
* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV
PMZB670UPE Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics
RDSon
drain-source on-state res
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