Datasheet4U Logo Datasheet4U.com

PMXB350UPE - P-Channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection 1 kV HBM.
  • Drain-source on-state resistance RDSon = 350 mΩ 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMXB350UPE P-channel Trench MOSFET NXP
PMXB360ENEA N-channel Trench MOSFET NXP
PMXB120EPE P-channel Trench MOSFET NXP
PMXB40UNE N-channel Trench MOSFET NXP
PMXB43UNE N-channel Trench MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PMXB360ENEA N-Channel MOSFET
PMXB120EPE P-Channel MOSFET
PMXB40UNE N-Channel MOSFET
PMXB43UNE N-Channel MOSFET
PMXB56EN N-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-source on-state resistance RDSon = 350 mΩ 3. Applications • High-side load switch and charging switch for portable devices • Power management in battery driven portables • LED driver • DC-to-DC converter 4. Quick reference data Table 1.
Published: |