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PMXB40UNE - N-channel Trench MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 34 mΩ Very low threshold voltage of 0.65 V for portable.

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Datasheet Details

Part number PMXB40UNE
Manufacturer NXP
File Size 279.13 KB
Description N-channel Trench MOSFET
Datasheet download datasheet PMXB40UNE Datasheet
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DF N1 01 PMXB40UNE 27 September 2013 0D -3 12 V, N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • • Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 34 mΩ Very low threshold voltage of 0.65 V for portable applications 3.
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