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PMXB360ENEA - N-Channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic-level compatible.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Tin-plated 100 % solderable side pads for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PMXB360ENEA
Manufacturer nexperia
File Size 241.89 KB
Description N-Channel MOSFET
Datasheet download datasheet PMXB360ENEA Datasheet
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PMXB360ENEA 80 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • Power management in automotive and industrial applications • LED driver • DC-to-DC converter 4. Quick reference data Table 1.
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