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NX6008NBKS dual N-channel MOSFET

NX6008NBKS Description

NX6008NBKS 60 V, dual N-channel Trench MOSFET 19 August 2021 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench.

NX6008NBKS Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

NX6008NBKS Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V;

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