NX6309GH LASER DIODE

California Eastern Labs

Description

LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION .
The NX6309GH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

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Datasheet Specifications

Part number: NX6309GH
Manufacturer: California Eastern Labs
File Size: 191.98 KB
Datasheet: NX6309GH-CaliforniaEasternLabs.pdf
Description: LASER DIODE

Features

* Optical output power
* Low threshold current
* Differential efficiency
* Wide operating temperature range
* InGaAs monitor PIN-PD
* CAN package
* Focal point Po = 10.0 mW lth = 10 mA ηd = 0.40 W/A TC =
* 40 to +85°C φ 5.6 mm 10 mm D

Applications

* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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NX6309GH LASER DIODE California Eastern Labs

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