LMG5200 Datasheet (Texas Instruments) - 10-A GaN Half-Bridge Power Stage

LMG5200, 10-A GaN Half-Bridge Power Stage

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs.

The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs prov

LMG5200 Features

* 1 Integrated 15-mΩ GaN FETs and Driver

* 80-V Continuous, 100-V Pulsed Voltage Rating

* Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements

* Very Low Common Source Inductance to Ensure High Slew Rate Switching