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LMG2610 - Integrated 650-V GaN Half Bridge

Description

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications.

Features

  • 650-V GaN power-FET half bridge.
  • 170-mΩ low-side and 248-mΩ high-side GaN FETs.
  • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control.
  • Current-sense emulation with high-bandwidth and high accuracy.
  • Low-side / high-side gate-drive interlock.
  • High-side gate-drive signal level shifter.
  • Smart-switched bootstrap diode function.
  • High-side start up : < 8 us.
  • Low-side / high-side cycl.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LMG2610 SNOSDE2A – OCTOBER 2022 – REVISED DECEMBER 2022 LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive interlock • High-side gate-drive signal level shifter • Smart-switched bootstrap diode function • High-side start up : < 8 us • Low-side / high-side cycle-by-cycle over-current protection • Over-temperature protection with FLT pin reporting • AUX idle quiescent current: 240 μA • AUX standby quiescent current: 50 μA • BST idle quiescent current: 60 μA • Maximum supply and input
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