CSD19536KCS Datasheet - Texas Instruments

CSD19536KCS 100V N-Channel Power MOSFET

This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 10 9 TC = 25°C, ID = 100A TC = 125°C, ID = 100A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G00.

CSD19536KCS Features

* Ultra-low Qg and Qgd

* Low thermal resistance

* Avalanche rated

* Pb-Free terminal plating

* RoHS compliant

* Halogen free

* TO-220 plastic package 2 Applications

* Secondary side synchronous rectifier

* Motor control 3 Descri

CSD19536KCS Datasheet (1.00 MB)