CSD19531KCS Datasheet - Texas Instruments

CSD19531KCS 100V N-Channel Power MOSFET

This 100-V, 6.4-mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. . Drain (Pin 2) Gate (Pin 1) . Source (Pin 3) Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VAL.

CSD19531KCS Features

* 1 Ultra-Low Qg and Qgd

* Low-Thermal Resistance

* Avalanche Rated

* Lead-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* TO-220 Plastic Package 2 Applications

* Secondary Side Synchronous Rectifier

* Hot Swap Telecom

CSD19531KCS Datasheet (365.16 KB)