CSD19533KCS Datasheet - Texas Instruments

CSD19533KCS 100V N-Channel Power MOSFET

This 100 V, 8.7 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Re.

CSD19533KCS Features

* 1 Ultra-Low Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* Pb Free Terminal Plating

* RoHS Compliant

* Halogen Free

* TO-220 Plastic Package 2 Applications

* Secondary Side Synchronous Rectifier

* Motor Control 3 Descr

CSD19533KCS Datasheet (677.53 KB)