Datasheet Details
- Part number
- YJS12G06D
- Manufacturer
- Yangzhou Yangjie
- File Size
- 1.19 MB
- Datasheet
- YJS12G06D-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJS12G06D Description
YJS12G06D RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Split Gate Trench MOSFET technology.
Excellent package for heat dissipation.
High density cell design for low RDS(ON)
Applications.
YJS12G06D Applications
* DC-DC Converters
* Power management functions
* Industrial and Motor Drive application
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
60
V
Gate-source Voltage
VGS
±20
V
Drain Current (Silicon limited)
TA=
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