Datasheet Details
- Part number
- YJS05GP10A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 799.13 KB
- Datasheet
- YJS05GP10A-YangzhouYangjie.pdf
- Description
- P-Channel Enhancement Mode Field Effect Transistor
YJS05GP10A Description
YJS05GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-10V) * R.
Split gate trench MOSFET technology.
High density cell design for low RDS(ON).
Low Crss(Typ.
Moisture Sensitivity Level 3.
YJS05GP10A Applications
* DC motor control
* power supplies
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage Gate-source Voltage
Drain Current
Pulsed Drain Current A Avalanche energy B
TA=25℃ TA=100℃
VDS
-100
V
VGS
±20
V
-4.5
ID
A
-2.85
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