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YJS12G06A - N-Channel Enhancement Mode Field Effect Transistor

Description

Split Gate Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Applications Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless ot

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Datasheet Details

Part number YJS12G06A
Manufacturer Yangzhou Yangjie
File Size 572.54 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet YJS12G06A Datasheet

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YJS12G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ●VDS ●ID(at VGS=10V) ●RDS(ON)( at VGS=10V) ●RDS(ON)( at VGS=4.5V) ●100% UIS Tested 100% Rg Tested 100% ▽VDS Tested 60V 12A ＜9.0mΩ ＜13.0mΩ Top View General Description ●Split Gate Trench Power MV MOSFET technology ●Low RDS(ON) ●Low Gate Charge ●Optimized for fast-switching applications Applications ●Synchronus Rectification in DC/DC and AC/DC Converters ●Industrial and Motor Drive application ■Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage VDS Gate-source Voltage VGS Drain Current G TC=25℃ ID TC=100℃ Pulsed Drain Current C IDM Avalanche energy L=0.
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