Datasheet Details
- Part number
- YJS12G06A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 572.54 KB
- Datasheet
- YJS12G06A-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJS12G06A Description
YJS12G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary *VDS *ID(at VGS=10V) *RDS(ON)( at VGS=10V) .
Split Gate Trench Power MV MOSFET technology.
Low RDS(ON).
Low Gate Charge.
Optimized for fast-switching applications
Applications.
YJS12G06A Applications
* Applications
* Synchronus Rectification in DC/DC and AC/DC Converters
* Industrial and Motor Drive application
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-source Voltage
VDS
Gate-source Voltage
VGS
Drain Current G
TC=25℃
ID
TC=100℃
Pulsed Dr
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