YJL3416A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJL3416A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS 20V * ID * RDS(ON)( at VGS=4.5V) Trench Power LV MOSFET technology. High Power and current handing capability Applications. PWM application. Load switch. A.

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Datasheet Specifications

Part number: YJL3416A
Manufacturer: Yangzhou Yangjie
File Size: 620.21 KB
Datasheet: YJL3416A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* PWM application
* Load switch
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Ther

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YJL3416A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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