Datasheet Details
- Part number
- YJG85G06A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 842.33 KB
- Datasheet
- YJG85G06A-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJG85G06A Description
YJG85G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * ID (Package limited) * RDS.
Split Gate Trench MOSFET technology.
Excellent package for heat dissipation.
High density cell design for low RDS(ON)
Applications.
YJG85G06A Applications
* DC-DC Converters
* Power management functions
* Synchronous-rectification applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current
Drain Current A Pulsed Drain Current B
TC=25
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