YJG85G06A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJG85G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * ID (Package limited) * RDS.
Split Gate Trench MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

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Datasheet Specifications

Part number: YJG85G06A
Manufacturer: Yangzhou Yangjie
File Size: 842.33 KB
Datasheet: YJG85G06A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Synchronous-rectification applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Drain Current A Pulsed Drain Current B TC=25

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