YJG53G06A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJG53G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Split Gate Trench MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

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Datasheet Specifications

Part number: YJG53G06A
Manufacturer: Yangzhou Yangjie
File Size: 631.44 KB
Datasheet: YJG53G06A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Industrial and Motor Drive application
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A Tc=25℃ Tc=100℃ Avalanc

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