YJG25GP10A P-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJG25GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-10V) * R.
Split gate trench MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON) Applications.

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Datasheet Specifications

Part number: YJG25GP10A
Manufacturer: Yangzhou Yangjie
File Size: 1.05 MB
Datasheet: YJG25GP10A-YangzhouYangjie.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS -100 Gate-source Voltage Drain Current Tc=25℃ Tc=100℃ VGS ±20 -25 ID -16 Pulsed Drain Current A Avalanche energy B IDM

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