Datasheet Details
- Part number
- YJG25GP10A
- Manufacturer
- Yangzhou Yangjie
- File Size
- 1.05 MB
- Datasheet
- YJG25GP10A-YangzhouYangjie.pdf
- Description
- P-Channel Enhancement Mode Field Effect Transistor
YJG25GP10A Description
YJG25GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-10V) * R.
Split gate trench MOSFET technology.
Excellent package for heat dissipation.
High density cell design for low RDS(ON)
Applications.
YJG25GP10A Applications
* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-source Voltage
VDS
-100
Gate-source Voltage Drain Current
Tc=25℃ Tc=100℃
VGS
±20
-25 ID
-16
Pulsed Drain Current A Avalanche energy B
IDM
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