XP2322GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP2322GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Package.
XP2322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast G switching performance.

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Datasheet Specifications

Part number: XP2322GN
Manufacturer: YAGEO
File Size: 179.85 KB
Datasheet: XP2322GN-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 20V 90mΩ 2.5A D S Absolute Maximum Ratings@Tj=25oC(unless othe

XP2322GN Distributors

📁 Related Datasheet

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XP2322GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP2322GN-like datasheet