XP2306AGN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP2306AGN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Lower On-resistance D BVDSS RDS(ON) ▼ Surfa.
XSemi MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and G cost-effectiveness d.

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Datasheet Specifications

Part number: XP2306AGN
Manufacturer: YAGEO
File Size: 180.28 KB
Datasheet: XP2306AGN-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* 30V 35mΩ 5A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissi

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XP2306AGN N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP2306AGN-like datasheet