XP2306GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP2306GN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Lower On-resistance D ▼ Surface Mount Package.
SOT-23 G XP2306 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performan.

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Datasheet Specifications

Part number: XP2306GN
Manufacturer: YAGEO
File Size: 184.63 KB
Datasheet: XP2306GN-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID 20V 35mΩ 5.3A D G S Absolute Maximum Ratings@Tj

XP2306GN Distributors

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XP2306GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP2306GN-like datasheet