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E4D20120D Silicon Carbide Power MOSFET

E4D20120D Description

E4D20120D 1200 V, 20 A Silicon Carbide Schottky Diode .

E4D20120D Features

* 4th generation SiC merged PIN schottky technology
* Zero reverse recovery current
* High-frequency operation
* Temperature-independent switching behavior
* AEC-Q101 qualified and PPAP capable
* Humidity resistant TO-247-3 Package Types: TO-247-3 PN

E4D20120D Applications

* Boost diodes in PFC or DC/DC stages
* Free wheeling diodes in inverter stages
* AC/DC converters
* Automotive and traction power conversion
* PV inverters Benefits
* Replace bipolar with unipolar rectifiers
* Essentially no switching losses

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Datasheet Details

Part number
E4D20120D
Manufacturer
Wolfspeed
File Size
655.85 KB
Datasheet
E4D20120D-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

📁 Related Datasheet

  • E4D20120A - Silicon Carbide Schottky Diode (CREE)
  • E4D10120A - Silicon Carbide Schottky Diode (CREE)

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Silicon Carbide Power MOSFET Wolfspeed
Wolfspeed E4D20120D-like datasheet