E4D20120D Silicon Carbide Power MOSFET

Wolfspeed

Description

E4D20120D 1200 V, 20 A Silicon Carbide Schottky Diode .

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Datasheet Specifications

Part number: E4D20120D
Manufacturer: Wolfspeed
File Size: 655.85 KB
Datasheet: E4D20120D-Wolfspeed.pdf
Description: Silicon Carbide Power MOSFET

Features

* 4th generation SiC merged PIN schottky technology
* Zero reverse recovery current
* High-frequency operation
* Temperature-independent switching behavior
* AEC-Q101 qualified and PPAP capable
* Humidity resistant TO-247-3 Package Types: TO-247-3 PN

Applications

* Boost diodes in PFC or DC/DC stages
* Free wheeling diodes in inverter stages
* AC/DC converters
* Automotive and traction power conversion
* PV inverters Benefits
* Replace bipolar with unipolar rectifiers
* Essentially no switching losses

E4D20120D Distributors

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