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E4D02120E Silicon Carbide Schottky Diode

E4D02120E Description

E4D02120E 4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode .
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency stan.

E4D02120E Features

* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
* Zero Reverse Recovery Current / Forward Recovery Voltage
* Temperature-Independent Switching Behavior

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Datasheet Details

Part number
E4D02120E
Manufacturer
Wolfspeed
File Size
709.40 KB
Datasheet
E4D02120E-Wolfspeed.pdf
Description
Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode Wolfspeed
Wolfspeed E4D02120E-like datasheet