WFW20N60W - Silicon N-Channel MOSFET

Winsemi

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Datasheet Details

Part number	WFW20N60W
Manufacturer	Winsemi
File Size	340.55 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFW20N60W_Winsemi.pdf

WFW20N60W Product details

Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current

Features

20A,600V,RDS(on)(Max0.39Ω)@VGS=10V Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Published: Apr 25, 2012 |