WFW18N50N - Silicon N-Channel MOSFET

Winsemi

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Datasheet Details

Part number	WFW18N50N
Manufacturer	Winsemi
File Size	862.12 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFW18N50N_Winsemi.pdf

WFW18N50N Product details

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain

Features

18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
Ultra-low Gate charge(Typical 42nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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Published: Apr 25, 2012 |