WFW13N50 - Silicon N-Channel MOSFET

Winsemi

WFW13N50 Datasheet Preview — Preview of WFW13N50 PDF

Datasheet Details

Part number	WFW13N50
Manufacturer	Winsemi
File Size	625.20 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFW13N50_Winsemi.pdf

WFW13N50 Product details

Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

Features

13A,500V, RDS(on)(Max0.46Ω)@VGS=10V.
Ultra-low Gate charge(Typical 43nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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Published: Apr 25, 2012 |