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BUT11AF - SILICON DIFFUSED POWER TRANSISTOR

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Description

SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation vol

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