WNM3019 Datasheet - WillSEMI

WNM3019 MOSFET

The WNM3019 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM3019 is Pb-free and Halogen-free. WNM3019 Http://www.sh-wills.

WNM3019 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* HBM ESD protection >2 kV

* Small package SOT-523 Applications

* Driver: Relay, Solenoid, Lamps,Hammers etc.

* Power supply converters circuit

* Load/Power Switching

WNM3019 Datasheet (496.71 KB)

WNM3019 Datasheet Preview — Preview of WNM3019 PDF

Datasheet Details

Part number:

WNM3019

Manufacturer:

WillSEMI

File Size:

496.71 KB

Description:

Mosfet.

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