2SD602LT1 Datasheet (WEJ) - NPN EPITAXIAL SILICON TRANSISTOR

2SD602LT1, NPN EPITAXIAL SILICON TRANSISTOR

RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Complement to MMBT2907ALT1 Collector Dissipation: Pc(max)=225mW Collector-Emitter Voltage :Vceo= 40V DABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit TCollector-Base Voltage Vcbo 75 V .,LCollector-Emitter Voltage Vceo 40 V 2.9 1.9 0.95 0.95 0.4 Emitter-Base Voltage Vebo 6 V Collector Current Ic 600 mA Collector Dissipation Ta=25 PD 225 mW OJunction Temperatu