2SD600 - PNP/NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD600
Manufacturer	Sanyo Semicon Device
File Size	126.38 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistor
Datasheet	2SD600_SanyoSemiconDevice.pdf

High breakdown voltage VCEO 100/120V, High current 1A.
Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature S.

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Published: Mar 30, 2005 |