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VT6045CBP - Trench MOS Barrier Schottky Rectifier

VT6045CBP Description

www.vishay.com VT6045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 .

VT6045CBP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106

VT6045CBP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) Package 2 x 30 A 45 V 320 A 0.47 V 150 °C 200 °C TO-220AB Diode variation

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Datasheet Details

Part number
VT6045CBP
Manufacturer
Vishay ↗
File Size
128.85 KB
Datasheet
VT6045CBP-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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