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VT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VT6045C Description

www.DataSheet.co.kr New Product VT6045C, VIT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF .

VT6045C Features

* TMBS TO-220AB ®
* Trench MOS Schottky technology TO-262AA
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Compliant to RoHS Directive 2002/95/EC and in ac

VT6045C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound m

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Datasheet Details

Part number
VT6045C
Manufacturer
Vishay ↗
File Size
189.65 KB
Datasheet
VT6045C_Vishay.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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