VT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VT6045C, VIT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF .

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Datasheet Specifications

Part number: VT6045C
Manufacturer: Vishay ↗
File Size: 189.65 KB
Datasheet: VT6045C_Vishay.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* TMBS TO-220AB ®
* Trench MOS Schottky technology TO-262AA
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Compliant to RoHS Directive 2002/95/EC and in ac

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound m

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VT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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