VSMY98525DS - High Power Infrared Emitting Diode

Name: VSMY98525DS
SKU: VSMY98525DS-1429890

Vishay

📥 Download Datasheet

VSMY98525DS Datasheet Preview — Preview of VSMY98525DS PDF

Datasheet Details

Part number	VSMY98525DS
Manufacturer	Vishay
File Size	209.97 KB
Description	High Power Infrared Emitting Diode
Datasheet	VSMY98525DS-Vishay.pdf

VSMY98525DS Product details

Description

As part of the SurfLightTM portfolio, the VSMY98525DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens.

Features

Package type: surface-mount.
Double stack technology.
Package form: power QFN.
Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00.
Peak wavelength: λp = 850 nm.
Zener diode for ESD protection up to 2 kV.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 25°.
Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses.
Low thermal resistance: RthJP = 9 K/W.

📁 VSMY98525DS Similar Datasheet

VSMY1850 - High Speed Infrared Emitting Diodes (Vishay Siliconix)
VSMY2850G - High Speed Infrared Emitting Diodes (Vishay Siliconix)
VSMY2850RG - High Speed Infrared Emitting Diodes (Vishay Siliconix)
VSMY3850 - High Speed Infrared Emitting Diode (Vishay Siliconix)
VSMY7850X01 - High Power Infrared Emitting Diode (Vishay Siliconix)
VSMY7852X01 - High Power Infrared Emitting Diode (Vishay Siliconix)
VSM002NE4MS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VSM003N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)

Other Datasheets by Vishay

VSMY98545 - High Power Infrared Emitting Diode
VSMY98545DS - High Power Infrared Emitting Diode
VSMY1940ITX01 - High Speed Infrared Emitting Diodes
VSMY2853G - High Speed Infrared Emitting Diodes
VSMY2853RG - High Speed Infrared Emitting Diodes
VSMY3890X01 - High Speed Infrared Emitting Diode

Published: Apr 25, 2020 |