VSLY5850 High Speed Infrared Emitting Diode

Vishay

Description

www.vishay.com VSLY5850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology 22114 .
As part of the SurfLightTM portfolio, the VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with extreme.

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Datasheet Specifications

Part number: VSLY5850
Manufacturer: Vishay ↗
File Size: 105.30 KB
Datasheet: VSLY5850-Vishay.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength: λp = 850 nm
* High reliability
* High radiant power
* High radiant intensity
* Narrow angle of half intensity: ϕ = ±

Applications

* Infrared radiation source for operation with CMOS cameras
* High speed IR data transmission
* Smoke-automatic fire detectors
* IR Flash PRODUCT SUMMARY COMPONENT VSLY5850 Ie (mW/sr) 600 Note
* Test conditions see table “Basic Characteristics” ϕ (deg) ±3

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VSLY5850 High Speed Infrared Emitting Diode Vishay

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