VSLB9530S High Speed Infrared Emitting Diode

Vishay

Description

VSLB9530S www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW .
VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.

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Datasheet Specifications

Part number: VSLB9530S
Manufacturer: Vishay ↗
File Size: 338.67 KB
Datasheet: VSLB9530S_Vishay.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded
* Package form: TELUX
* Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
* Peak wavelength: λp = 940 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity, vertical: ϕv = ± 1

Applications

* Emitter source for gesture recognition applications
* Emitter source for 3D TV
* Emitter source for mid range proximity detection
* Emitter source for object/presence detection PRODUCT SUMMARY COMPONENT VSLB9530S Ie (mW/sr) 60 ϕv (deg) ± 18 ϕh (deg) ± 36 λp (nm) 94

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VSLB9530S High Speed Infrared Emitting Diode Vishay

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