VSLB4940 High Speed Infrared Emitting Diode

Vishay

Description

www.vishay.com VSLB4940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8636-2 .
VSLB4940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package. Package type: leade.

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Datasheet Specifications

Part number: VSLB4940
Manufacturer: Vishay ↗
File Size: 103.48 KB
Datasheet: VSLB4940-Vishay.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded
* Package form: T-1, clear epoxy
* Dimensions: Ø 3 mm
* High speed
* High radiant power
* Low forward voltage
* Suitable for high pulse current operation
* Angle of half intensity: ϕ = ± 22°
* Peak wavelen

Applications

* Infrared remote control units
* Reflective sensors
* Light barriers PRODUCT SUMMARY COMPONENT VSLB4940 Ie (mW/sr) 65 Note
* Test conditions see table “Basic Characteristics“ ϕ (deg) ± 22 λp (nm) 940 tr (ns) 15 ORDERING INFORMATION ORDERING CODE VSLB4940 Note

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VSLB4940 High Speed Infrared Emitting Diode Vishay

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