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VS-GT300YH120N DIAP Trench IGBT

VS-GT300YH120N Description

www.vishay.com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERIS.

VS-GT300YH120N Features

* 1200 V IGBT trench and field stop technology with positive temperature coefficient
* Low switching losses
* Maximum junction temperature 175 °C
* 10 μs short circuit capability
* Low inductance case
* HEXFRED® antiparallel and series diodes with soft

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DIAP Trench IGBT Vishay
Vishay VS-GT300YH120N-like datasheet