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VS-GT100TP120N Half Bridge IGBT

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Description

www.vishay.com VS-GT100TP120N Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C V.
Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

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Features

* Low VCE(sat) trench IGBT technology
* 10 μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175 °C
* Low inductance case
* Fast and soft reverse recovery antiparallel FWD
* Isolated cop

Applications

* UPS (Uninterruptable Power Supply)
* Inverter for motor drive

VS-GT100TP120N Distributors

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