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VS-GT100TP60N Half Bridge IGBT

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Description

www.vishay.com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = .
Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

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Features

* Low VCE(on) trench IGBT technology
* 5 μs short circuit capability
* VCE(on) with positive temperature coefficient
* Maximum junction temperature 175 °C
* Low inductance case
* Fast and soft reverse recovery antiparallel FWD
* Isolated copper

Applications

* UPS (uninterruptable power supply)
* Switching mode power supplies

VS-GT100TP60N Distributors

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