Datasheet4U Logo Datasheet4U.com

VS-GT200TP065N Half Bridge - Trench IGBT

VS-GT200TP065N Description

www.vishay.com VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at.

VS-GT200TP065N Features

* Trench IGBT
* Very low VCE(on)
* 5 μs short circuit capability
* Positive VCE(on) temperature coefficient
* FRED Pt® anti-parallel diode low Qrr and low switching energy
* Industry and standard package
* TJ = 175 °C
* UL pending

📥 Download Datasheet

Preview of VS-GT200TP065N PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • VS-100M - POWER RELAY (Fujitsu)
  • VS-100S - POWER RELAY (Fujitsu)
  • VS-12M - POWER RELAY (Fujitsu)
  • VS-12S - POWER RELAY (Fujitsu)
  • VS-14M - POWER RELAY (Fujitsu)
  • VS-14S - POWER RELAY (Fujitsu)
  • VS-18M - POWER RELAY (Fujitsu)
  • VS-18S - POWER RELAY (Fujitsu)

📌 All Tags

Half Bridge Trench IGBT Vishay
Vishay VS-GT200TP065N-like datasheet