VS-GT180DA120U IGBT

Vishay

Description

www.vishay.com VS-GT180DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES I.

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Datasheet Specifications

Part number: VS-GT180DA120U
Manufacturer: Vishay ↗
File Size: 182.64 KB
Datasheet: VS-GT180DA120U-Vishay.pdf
Description: IGBT

Features

* 1200 V trench and field stop technology
* Low switching losses
* Positive temperature coefficient
* Easy paralleling
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® antiparallel diodes with ultrasoft reverse recovery
* TJ m

VS-GT180DA120U Distributors

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VS-GT180DA120U IGBT Vishay

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