Description
VB40M120C-E3, VB40M120C-M3, VB40M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra .
Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material c
Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-co
