VB40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

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Datasheet Specifications

Part number: VB40100G-E3
Manufacturer: Vishay ↗
File Size: 145.59 KB
Datasheet: VB40100G-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB40100G PIN 1 K PIN 2 HEATSINK VI40100G PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Pack

VB40100G-E3 Distributors

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VB40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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